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 FMBA0656
Discrete Power & Signal Technologies
FMBA0656
C2 E1 C1 Package: SuperSOT-6 Device Marking: .003 Note: The " . " (dot) signifies Pin 1 B2 E2 B1 Transistor 1 is NPN device, transistor 2 is PNP device.
NPN & PNP Complementary Dual Transistor SuperSOT- 6 Surface Mount Package
This device was designed for general purpose amplifier applications at collector currents to 300mA. Sourced from Process 33 (NPN) and Process 73 (PNP).
Absolute Maximum Ratings
Symbol VCEO VCBO VEBO IC PD TSTG TJ RJA Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current (continuous) Power Dissipation @Ta = 25C* Storage Temperature Range Junction Temperature
TA
= 25C unless otherwise noted
Value 80 80 4 500 0.7 -55 to +150 150 180
Units V V V mA W C C C/W
Thermal Resistance, Junction to Ambient
For each transistor, Pd = 350mW.
*Pd total, for both transistors.
Electrical Characteristics
Symbol BVCEO BVCBO BVEBO Parameter Collector to Emitter Voltage Collector to Base Voltage Emitter to Base Voltage
TA
= 25C unless otherwise noted
Test Conditions Ic = 1.0 mA Ic = 100 uA Ie = 100 uA
Min 80 80 4
Max
Units V V V
(c) 1997 Fairchild Semiconductor Corporation
Page 1 of 2
FMBA0656.lwpPr33&73(Y3)
FMBA0656
NPN & PNP Complementary Dual Transistor
(continued)
Electrical Characteristics
Symbol ICBO ICEO hFE VCE(sat) VBE(on) Parameter Collector Cutoff Current Collector Cutoff Current DC Current Gain
TA = 25C unless otherwise noted
Test Conditions Vcb = 80 V Vce = 60 V Vce = 1 V, Ic = 10 mA Vce = 1 V, Ic = 100 mA
Min
Max 100 100
Units nA nA -
100 100 0.25 1.2
Collector-Emitter Saturation Voltage Ic = 100 mA, Ib = 10 mA Base-Emitter On Voltage Ic = 100 mA, Vce = 1 V
V V
Small - Signal Characteristics
fT Current Gain - Bandwidth Product Vce = 1 V, Ic = 100 mA, f = 100 MHz 50 -
(c) 1997 Fairchild Semiconductor Corporation
Page 2 of 2
FMBA0656.lwpPr33&73(Y3)


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